In thiswork,we provide a numerical/experimental investigation of themicromechanics-induced scattered response of a polysilicon on-chip MEMS testing device, whose moving structure is constituted by a slender cantilever supporting a massive perforated plate. The geometry of the cantilever was specifically designed to emphasize the micromechanical effects, in compliance with the process constraints. To assess the effects of the variability of polysilicon morphology and of geometrical imperfections on the experimentally observed nonlinear sensor response, we adopt statistical Monte Carlo analyses resting on a coupled electromechanical finite element model of the device. For each analysis, the polysilicon morphology was digitally built through a Voronoi tessellation of the moving structure, whose geometry was in turn varied by sampling out of a uniform probability density function the value of the over-etch, considered as the main source of geometrical imperfections. The comparison between the statistics of numerical and experimental results is adopted to assess the relative significance of the uncertainties linked to variations in the micro-fabrication process, and the mechanical film properties due to the polysilicon morphology.

Statistical investigation of the mechanical and geometrical properties of polysilicon films through on-chip tests

Mirzazadeh, Ramin;Ghisi, Aldo;Mariani, Stefano
2018-01-01

Abstract

In thiswork,we provide a numerical/experimental investigation of themicromechanics-induced scattered response of a polysilicon on-chip MEMS testing device, whose moving structure is constituted by a slender cantilever supporting a massive perforated plate. The geometry of the cantilever was specifically designed to emphasize the micromechanical effects, in compliance with the process constraints. To assess the effects of the variability of polysilicon morphology and of geometrical imperfections on the experimentally observed nonlinear sensor response, we adopt statistical Monte Carlo analyses resting on a coupled electromechanical finite element model of the device. For each analysis, the polysilicon morphology was digitally built through a Voronoi tessellation of the moving structure, whose geometry was in turn varied by sampling out of a uniform probability density function the value of the over-etch, considered as the main source of geometrical imperfections. The comparison between the statistics of numerical and experimental results is adopted to assess the relative significance of the uncertainties linked to variations in the micro-fabrication process, and the mechanical film properties due to the polysilicon morphology.
2018
Over-etch; Polysilicon morphology; Sensitivity to imperfections; Control and Systems Engineering; Mechanical Engineering; Electrical and Electronic Engineering
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1045280
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