Heavily doped Ge thin films grown on different substrates have been investigated by infrared (IR) reflectometry. Screened plasma frequency and losses have been determined to assess the possibilities and limitations of Ge for mid infrared plasmonic.

Heavily phosphorous-doped Germanium thin films for mid-infrared plasmonics

Frigerio, J.;Isella, G.;Biagioni, P.;
2015-01-01

Abstract

Heavily doped Ge thin films grown on different substrates have been investigated by infrared (IR) reflectometry. Screened plasma frequency and losses have been determined to assess the possibilities and limitations of Ge for mid infrared plasmonic.
2015
IEEE International Conference on Group IV Photonics GFP
9781479982554
Electrical and Electronic Engineering; Ceramics and Composites; Electronic, Optical and Magnetic Materials
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1038351
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