Resonant emission is observed up to â¼2.3μm from Ge on Si microdisks, strained by silicon nitride stressors. These results demonstrate that compact, highly strained Ge cavities are achievable on Si substrates using CMOS compatible processes.
Highly strained Ge on Si microdisks with silicon nitride stressors
Frigerio, J.;Chrastina, D.;Isella, G.;
2015-01-01
Abstract
Resonant emission is observed up to â¼2.3μm from Ge on Si microdisks, strained by silicon nitride stressors. These results demonstrate that compact, highly strained Ge cavities are achievable on Si substrates using CMOS compatible processes.File in questo prodotto:
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