Mid-infrared intersubband absorption from p-Ge quantum wells with Sio.sGeo.s barriers grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness.
Intersubband absorption in p-Ge QWs on Si
Ballabio, A.;Frigerio, J.;Isella, Giovanni;
2016-01-01
Abstract
Mid-infrared intersubband absorption from p-Ge quantum wells with Sio.sGeo.s barriers grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness.File in questo prodotto:
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