We theoretically and experimentally investigate a novel modulation concept on silicon (Si) based on the combination of quantum confinement and plasmon enhancement effects. We experimentally study the suitability of Ge/SiGe quantum wells (QWs) on Si as the active material for a plasmon-enhanced optical modulator. We demonstrate that in QW structures absorption and modulation of light with transverse magnetic (TM) polarization are greatly enhanced due to favorable selection rules. Later, we theoretically study the plasmon propagation at the metal-Ge/SiGe QW interface. We design a novel Ge/SiGe QW structure that allows maximized overlap between the plasmonic mode and the underlying Ge/SiGe QWs. Copyright © Materials Research Society 2014.

Ge quantum well plasmon-enhanced quantum confined Stark effect modulator

Frigerio, J.;Isella, G.;Chrastina, D.;
2014-01-01

Abstract

We theoretically and experimentally investigate a novel modulation concept on silicon (Si) based on the combination of quantum confinement and plasmon enhancement effects. We experimentally study the suitability of Ge/SiGe quantum wells (QWs) on Si as the active material for a plasmon-enhanced optical modulator. We demonstrate that in QW structures absorption and modulation of light with transverse magnetic (TM) polarization are greatly enhanced due to favorable selection rules. Later, we theoretically study the plasmon propagation at the metal-Ge/SiGe QW interface. We design a novel Ge/SiGe QW structure that allows maximized overlap between the plasmonic mode and the underlying Ge/SiGe QWs. Copyright © Materials Research Society 2014.
2014
Photonic and Plasmonic Materials for Enhanced Optoelectronic Performance
9781510805057
optical; optical properties; optoelectronic; Materials Science (all); Condensed Matter Physics; Mechanical Engineering; Mechanics of Materials
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1036473
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