We address the behavior of mid-infrared localized plasmon resonances in elongated germanium antennas integrated on silicon substrates. Calculations based on Mie theory and on the experimentally retrieved dielectric constant allow us to study the tunability and the figures of merit of plasmon resonances in heavily-doped germanium and to preliminarily compare them with those of the most established plasmonic material, gold.

Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si

Biagioni, P.;Frigerio, J.;Isella, G.;
2015-01-01

Abstract

We address the behavior of mid-infrared localized plasmon resonances in elongated germanium antennas integrated on silicon substrates. Calculations based on Mie theory and on the experimentally retrieved dielectric constant allow us to study the tunability and the figures of merit of plasmon resonances in heavily-doped germanium and to preliminarily compare them with those of the most established plasmonic material, gold.
2015
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXIII
9781628414479
Germanium; mid-infrared; plasmonics; silicon; Electronic, Optical and Magnetic Materials; Condensed Matter Physics; Computer Science Applications1707 Computer Vision and Pattern Recognition; Applied Mathematics; Electrical and Electronic Engineering
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1036472
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