An Algorithm for Mixed-Mode 3D TCAD for Power Electronics Devices, and Application to Power p-i-n Diode

Cutting edge semiconductor devices for power electronic applications, such as Phase Control Thyristors (PCTs) or Bimode Insulated Gate Transistor (BIGTs), present large area and complex 3D geometry, thus requiring full scale 3D models for their simulation. Moreover, sensitivity to temperature variations and complex loading conditions call for mixed mode simulation of distributed devices coupled to external controlling circuits. In this work, we describe a strategy for coupled simulation of 3D devices and lumped circuit networks, with particular emphasis on efficient iterative solution strategies for nonlinear equations. The algorithm presented is tested on a p-i-n power diode, for which quasi-static on-state and transient switching (reverse recovery) simulations are performed.