We present a spectroscopic system constituted by a Silicon Drift Detector (SDD) coupled to a CMOS charge sensitive preamplifier, named SIRIO, specifically designed to reach ultimate low noise levels. The SDD, with an active area of 13mm2, has been manufactured by optimizing the production processes in order to reduce the anode current, successfully reaching current densities between 17pA/cm2 and 25pA/cm2 at + 20°C for drift fields ranging from 100 V/cm to 500 V/cm. The preamplifier shows minimum intrinsic noise levels of 1.27 and 1.0 electrons r.m.s. at +20°C and -30°C, respectively. At room temperature ( + 20°C) the 55Fe 5.9 keV and the pulser lines have 136 eV and 64 eV FWHM, respectively, corresponding to an equivalent noise charge of 7.4 electrons r.m.s.; the noise threshold is at 165 eV. The energy resolution, as measured on the pulser line, ranges from 82 eV FWHM (9.4 electrons r.m.s.) at + 30°C down to 29 eV FWHM (3.3 electrons r.m.s.) at - 30°C.
|Titolo:||X-Ray Silicon Drift Detector-CMOS Front-End System with High Energy Resolution at Room Temperature|
|Autori interni:||BERTUCCIO, GIUSEPPE|
|Data di pubblicazione:||2016|
|Rivista:||IEEE TRANSACTIONS ON NUCLEAR SCIENCE|
|Appare nelle tipologie:||01.1 Articolo in Rivista|