In article number 1600085, L. Baldrati et al. present a novel artificial multiferroic displaying perpendicular magnetic anisotropy: the CoFeB/BaTiO3 bilayer. Upon reversal of the BaTiO3 ferroelectric polarization, the CoFeB electrode jumps between upwards and downwards magnetization. The magnetically assisted bipolar electric switching of the magnetization is achieved, via CMOS compatible voltage pulses, under bias fields as low as 10 Oe.

Artificial Multiferroics: Electrical Switching of Magnetization in the Artificial Multiferroic CoFeB/BaTiO3 (Adv. Electron. Mater. 7/2016)

BALDRATI, LORENZO;RINALDI, CHRISTIAN;ASA, MARCO;CANTONI, MATTEO;BERTACCO, RICCARDO
2016

Abstract

In article number 1600085, L. Baldrati et al. present a novel artificial multiferroic displaying perpendicular magnetic anisotropy: the CoFeB/BaTiO3 bilayer. Upon reversal of the BaTiO3 ferroelectric polarization, the CoFeB electrode jumps between upwards and downwards magnetization. The magnetically assisted bipolar electric switching of the magnetization is achieved, via CMOS compatible voltage pulses, under bias fields as low as 10 Oe.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/1015430
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