Process induced tensile strain of Ge on Si nanopillars by ICP-PECVD SiN stressor layers

Silicon nitride stressor layers deposited by inductively coupled plasma-enhanced-chemical-vapor-deposition were used to increase the emission wavelength of germanium nanopillars. These stressors contain less hydrogen than silicon nitride deposited by other techniques, and therefore should provide lower optical loss in strained devices operating near telecoms wavelengths, or in the mid-infrared.