We carried out a kinetic analysis of metallorganic vapor phase epitaxy (MOVPE) of GaN to investigate the dependence of the growth rate on the process conditions as a function of residence time of the precursors in the reactor. The wafer was not rotated during growth, allowing us to analyze the thickness profile of the film in the direction of gas flow, and hence the dependence of the growth rate on the residence time. The growth rate is determined mainly by the concentration of the growth species and mass transfer of the growth species to the wafer surface. The growth rate peaked in the flow direction, and the position of this peak could, in most cases, be explained by considering a combination of the linear gas velocity and the time constant for vertical diffusion of trimethylgallium (TMGa) and/or growth species across the NH3 feed stream to the wafer surface. In some cases this was not possible, indicating that more complex effects were significant. This work is expected to contribute to understanDing of the reaction pathways for GaN-MOVPE, and the growth rate data reported here are expected to provide useful benchmarks for growth simulations that combine computational fluid dynamics and reaction models.
|Titolo:||Kinetic analysis of gan-movpe via thickness profiles in the gas flow direction with systematically varied growth conditions|
|Data di pubblicazione:||2016|
|Appare nelle tipologie:||01.1 Articolo in Rivista|