This letter describes the reduction of optical crosstalk by means of focused ion beam-etched trenches in InGaAs/InP single-photon avalanche diode arrays. Platinum-filled trenches have been fabricated in a linear array in order to limit the direct optical crosstalk between neighboring pixels. Experimental measurements prove that optical crosstalk has been reduced by ∼60 % thanks to a strong suppression of direct optical paths. An optical model is introduced in order to describe the main contributions to crosstalk and to validate measurements.

Optical Crosstalk in InGaAs/InP SPAD Array: Analysis and Reduction with FIB-Etched Trenches

CALANDRI, NICCOLO';SANZARO, MIRKO;TOSI, ALBERTO
2016

Abstract

This letter describes the reduction of optical crosstalk by means of focused ion beam-etched trenches in InGaAs/InP single-photon avalanche diode arrays. Platinum-filled trenches have been fabricated in a linear array in order to limit the direct optical crosstalk between neighboring pixels. Experimental measurements prove that optical crosstalk has been reduced by ∼60 % thanks to a strong suppression of direct optical paths. An optical model is introduced in order to describe the main contributions to crosstalk and to validate measurements.
crosstalk; Focused Ion Beam; InGaAs; InP; photon counting; Single Photon Avalanche Diodes; trench; Electronic, Optical and Magnetic Materials; Atomic and Molecular Physics, and Optics; Electrical and Electronic Engineering
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1012848
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