This letter describes the reduction of optical crosstalk by means of focused ion beam-etched trenches in InGaAs/InP single-photon avalanche diode arrays. Platinum-filled trenches have been fabricated in a linear array in order to limit the direct optical crosstalk between neighboring pixels. Experimental measurements prove that optical crosstalk has been reduced by ∼60 % thanks to a strong suppression of direct optical paths. An optical model is introduced in order to describe the main contributions to crosstalk and to validate measurements.
Optical Crosstalk in InGaAs/InP SPAD Array: Analysis and Reduction with FIB-Etched Trenches
CALANDRI, NICCOLO';SANZARO, MIRKO;TOSI, ALBERTO
2016-01-01
Abstract
This letter describes the reduction of optical crosstalk by means of focused ion beam-etched trenches in InGaAs/InP single-photon avalanche diode arrays. Platinum-filled trenches have been fabricated in a linear array in order to limit the direct optical crosstalk between neighboring pixels. Experimental measurements prove that optical crosstalk has been reduced by ∼60 % thanks to a strong suppression of direct optical paths. An optical model is introduced in order to describe the main contributions to crosstalk and to validate measurements.File in questo prodotto:
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