Room-temperature quantum-confined Stark effect in a Ge/SiGe quantum-well structure is reported at the wavelength of 1.3 μm. The operating wavelength is tuned by the use of strain engineering. Low-energy plasma-enhanced chemical vapor deposition is used to grow 20 periods of strain-compensated quantum wells (8 nm Ge well and 12 nm Si0.35Ge0.65 barrier) on Si0.21Ge0.79 virtual substrate. The fraction of light absorbed per well allows for a strong modulation around 1.3 μm. The half-width at half-maximum of the excitonic peak of only 12 meV allows for a discussion on physical mechanisms limiting the performances of such devices.

Room-temperature quantum-confined Stark effect in a Ge /SiGe quantum-well structure is reported at the wavelength of 1.3 μm. The operating wavelength is tuned by the use of strain engineering. Low-energy plasma-enhanced chemical vapor deposition is used to grow 20 periods of strain-compensated quantum wells (8 nm Ge well and 12 nm Si0.35Ge0.65 barrier) on Si 0.21Ge0.79 virtual substrate. The fraction of light absorbed per well allows for a strong modulation around 1.3 μm. The half-width at half-maximum of the excitonic peak of only 12 meV allows for a discussion on physical mechanisms limiting the performances of such devices. © 2012 Optical Society of America.

Quantum-confined Stark effect at 1.3 μm in Ge /Si0.35Ge 0.65 quantum-well structure

FRIGERIO, JACOPO;ISELLA, GIOVANNI;CHRASTINA, DANIEL;
2012

Abstract

Room-temperature quantum-confined Stark effect in a Ge/SiGe quantum-well structure is reported at the wavelength of 1.3 μm. The operating wavelength is tuned by the use of strain engineering. Low-energy plasma-enhanced chemical vapor deposition is used to grow 20 periods of strain-compensated quantum wells (8 nm Ge well and 12 nm Si0.35Ge0.65 barrier) on Si0.21Ge0.79 virtual substrate. The fraction of light absorbed per well allows for a strong modulation around 1.3 μm. The half-width at half-maximum of the excitonic peak of only 12 meV allows for a discussion on physical mechanisms limiting the performances of such devices.
Room-temperature quantum-confined Stark effect in a Ge /SiGe quantum-well structure is reported at the wavelength of 1.3 μm. The operating wavelength is tuned by the use of strain engineering. Low-energy plasma-enhanced chemical vapor deposition is used to grow 20 periods of strain-compensated quantum wells (8 nm Ge well and 12 nm Si0.35Ge0.65 barrier) on Si 0.21Ge0.79 virtual substrate. The fraction of light absorbed per well allows for a strong modulation around 1.3 μm. The half-width at half-maximum of the excitonic peak of only 12 meV allows for a discussion on physical mechanisms limiting the performances of such devices. © 2012 Optical Society of America.
Atomic and Molecular Physics, and Optics
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1005770
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