We present reflectance anisotropy spectra in the energy range 1.0-5.5 eV, measured for cleaved III-V surfaces after adsorption of caesium. In such a system Cs forms one-dimensional wire-like structures at low Cs coverages (Θ≪ 1 ML). The formation of these Cs wires leads to characteristic changes in the reflectance anisotropy spectra of the cleaved surface such as a minimum between the E0 and E1 bulk critical points of the substrate. For higher coverages the development of a two-dimensional layer can be optically monitored, as can the gradual transition to a three-dimensional disordered layer close to the saturation coverage.

Optical anisotropy of Cs nanostructures on III-V(110) surfaces

BUSSETTI, GIANLORENZO;
2004-01-01

Abstract

We present reflectance anisotropy spectra in the energy range 1.0-5.5 eV, measured for cleaved III-V surfaces after adsorption of caesium. In such a system Cs forms one-dimensional wire-like structures at low Cs coverages (Θ≪ 1 ML). The formation of these Cs wires leads to characteristic changes in the reflectance anisotropy spectra of the cleaved surface such as a minimum between the E0 and E1 bulk critical points of the substrate. For higher coverages the development of a two-dimensional layer can be optically monitored, as can the gradual transition to a three-dimensional disordered layer close to the saturation coverage.
2004
SPECIAL SECTION ON LINEAR OPTICS AT SURFACES AND INTERFACES
Condensed Matter Physics; Electronic, Optical and Magnetic Materials
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1000772
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