In this letter the authors use the evolution of reflectance anisotropy spectra with film thickness during the growth of organic molecular films of a prototype molecular system (α -quarterthiophene grown onto a single crystal of the same material) to demonstrate homoepitaxy. The real time monitoring of the optical anisotropy of a thin film during deposition by organic molecular beam epitaxy is assessed as a powerful tool to achieve an effective in situ control of the growth starting from the very early deposition stages. © 2006 American Institute of Physics.

Direct observation of the epitaxial growth of molecular layers on molecular single crystals

BUSSETTI, GIANLORENZO;
2006-01-01

Abstract

In this letter the authors use the evolution of reflectance anisotropy spectra with film thickness during the growth of organic molecular films of a prototype molecular system (α -quarterthiophene grown onto a single crystal of the same material) to demonstrate homoepitaxy. The real time monitoring of the optical anisotropy of a thin film during deposition by organic molecular beam epitaxy is assessed as a powerful tool to achieve an effective in situ control of the growth starting from the very early deposition stages. © 2006 American Institute of Physics.
2006
Physics and Astronomy (miscellaneous)
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1000760
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