The growth process of thin films and multilayers of quaterthiophene and sexithiophene onto molecular single crystals has been monitored in situ and in real time during deposition by organic molecular beam epitaxy, measuring the anisotropy of the optical reflectivity. The evolution of the spectra with thickness provides the signature of an epitaxial growth of the films. © 2007 Elsevier B.V. All rights reserved.
Real time detection of the epitaxial growth of oligothiophene layers by reflectance anisotropy spectroscopy
BUSSETTI, GIANLORENZO;
2007-01-01
Abstract
The growth process of thin films and multilayers of quaterthiophene and sexithiophene onto molecular single crystals has been monitored in situ and in real time during deposition by organic molecular beam epitaxy, measuring the anisotropy of the optical reflectivity. The evolution of the spectra with thickness provides the signature of an epitaxial growth of the films. © 2007 Elsevier B.V. All rights reserved.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
