The dispersion of quasi-one-dimensional dangling-bond electrons in π-bonded chains at the Si(1 1 1)-2 × 1 and Ge(1 1 1)-2 × 1 surfaces has been experimentally investigated by angle-resolved photoemission spectroscopy, in the direction perpendicular to the chains, with a high energy and angle precision. The results show a very small dispersion in the case of Si(1 1 1)-2 × 1 and instead a much larger (downward) dispersion (156 meV) in the case of Ge(1 1 1)-2 × 1. Accurate density-functional calculations with GW corrections are in very good agreement with the experimental results. Then the surface chains are somewhat interacting in Ge(1 1 1)-2 × 1 - the coupling occurring mainly through the subsurface region - while in Si(1 1 1)-2 × 1 they are essentially decoupled. Therefore the one-dimensional character of electrons in surface chains is enhanced in Si(1 1 1)-2 × 1 with respect to Ge(1 1 1)-2 × 1. © 2008 Elsevier B.V. All rights reserved.

Dispersion of surface bands and chain coupling at Si and Ge(1 1 1) surfaces

BUSSETTI, GIANLORENZO;
2008-01-01

Abstract

The dispersion of quasi-one-dimensional dangling-bond electrons in π-bonded chains at the Si(1 1 1)-2 × 1 and Ge(1 1 1)-2 × 1 surfaces has been experimentally investigated by angle-resolved photoemission spectroscopy, in the direction perpendicular to the chains, with a high energy and angle precision. The results show a very small dispersion in the case of Si(1 1 1)-2 × 1 and instead a much larger (downward) dispersion (156 meV) in the case of Ge(1 1 1)-2 × 1. Accurate density-functional calculations with GW corrections are in very good agreement with the experimental results. Then the surface chains are somewhat interacting in Ge(1 1 1)-2 × 1 - the coupling occurring mainly through the subsurface region - while in Si(1 1 1)-2 × 1 they are essentially decoupled. Therefore the one-dimensional character of electrons in surface chains is enhanced in Si(1 1 1)-2 × 1 with respect to Ge(1 1 1)-2 × 1. © 2008 Elsevier B.V. All rights reserved.
2008
Angle resolved photoemission; Germanium; Low index single crystal surfaces; Semiconducting surfaces; Silicon; Surface electronic phenomena (work function, surface potential, surface states, etc.); Physical and Theoretical Chemistry; Condensed Matter Physics; Surfaces and Interfaces
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1000745
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? ND
social impact