BIETTI, SERGIO
 Distribuzione geografica
Continente #
NA - Nord America 234
EU - Europa 122
AS - Asia 34
AF - Africa 6
OC - Oceania 3
SA - Sud America 1
Totale 400
Nazione #
US - Stati Uniti d'America 225
IT - Italia 29
FR - Francia 26
GB - Regno Unito 23
DE - Germania 22
CN - Cina 10
JP - Giappone 10
RU - Federazione Russa 7
IN - India 5
MX - Messico 5
CA - Canada 4
AU - Australia 3
DZ - Algeria 3
UA - Ucraina 3
VN - Vietnam 3
AE - Emirati Arabi Uniti 2
AT - Austria 2
CH - Svizzera 2
DK - Danimarca 2
IE - Irlanda 2
TW - Taiwan 2
ZA - Sudafrica 2
CL - Cile 1
CZ - Repubblica Ceca 1
ES - Italia 1
FI - Finlandia 1
HK - Hong Kong 1
MA - Marocco 1
SE - Svezia 1
SG - Singapore 1
Totale 400
Città #
Houston 25
Buffalo 21
Fairfield 16
Ann Arbor 12
Santa Cruz 12
Chicago 11
Wilmington 10
Woodbridge 10
Milan 9
Seattle 9
Bresso 7
Mountain View 7
Ashburn 6
Clifton 5
Manchester 5
San Diego 5
Cambridge 4
Las Vegas 4
Miyamachi 4
Sheffield 4
Birmingham 3
Council Bluffs 3
Hangzhou 3
Hanover 3
Los Angeles 3
Munich 3
Novosibirsk 3
San Giuliano Terme 3
Shanghai 3
Tsukuba 3
Angers 2
Aubière 2
Boardman 2
Canberra 2
Cedar Knolls 2
Chennai 2
Dong Ket 2
Dubendorf 2
Hsinchu 2
London 2
Mahendragarh 2
Muizenberg 2
Southend 2
Tokyo 2
Trieste 2
Villach 2
Atizapán 1
Bedford 1
Bengaluru 1
Bologna 1
Boulder 1
Büdelsdorf 1
Columbus 1
Cork 1
Dallas 1
Dublin 1
Fes 1
Fleming Island 1
Gammertingen 1
Grenoble 1
Guangzhou 1
Hamburg 1
Helsinki 1
Henderson 1
Hermosillo 1
Herndon 1
Hong Kong 1
Lake Forest 1
Miami 1
Mondeville 1
Moscow 1
New York 1
Newport 1
Niagara Falls 1
Omaha 1
Ottawa 1
Paderborn 1
Paris 1
Peterborough 1
Phoenix 1
Pisa 1
Portland 1
Puebla City 1
Puerto Real 1
Riva 1
San Francisco 1
San Jose 1
Shenzhen 1
Stockholm 1
Stourbridge 1
Sydney 1
Toronto 1
Torpoint 1
University Park 1
Washington 1
Waterloo 1
Whitechapel 1
Totale 299
Nome #
Raman spectroscopy of epitaxial InGaN/Si in the central composition range, file e0c31c0d-a0c6-4599-e053-1705fe0aef77 122
Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors, file e0c31c0c-3f24-4599-e053-1705fe0aef77 107
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates, file e0c31c10-e612-4599-e053-1705fe0aef77 57
Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control, file 4cd94502-5764-49f3-8bc7-b04945672ad1 49
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates, file e0c31c10-c4b0-4599-e053-1705fe0aef77 37
Ordered arrays of embedded Ga nanoparticles on patterned silicon substrates, file e0c31c0d-bab5-4599-e053-1705fe0aef77 21
Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets, file 881b4233-b079-4242-a88d-0b30c76c7c7a 13
Ordered arrays of embedded Ga nanoparticles on patterned silicon substrates, file e0c31c08-2439-4599-e053-1705fe0aef77 4
Totale 410
Categoria #
all - tutte 1.362
article - articoli 1.362
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.724


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201913 0 0 0 0 0 0 0 0 0 0 7 6
2019/202035 6 3 0 3 2 3 3 2 5 2 3 3
2020/202139 3 6 0 5 3 6 1 4 4 2 3 2
2021/2022102 5 1 6 19 13 5 2 5 1 14 26 5
2022/2023125 7 9 15 10 10 5 4 17 27 9 9 3
2023/202489 13 7 8 5 8 4 14 12 7 8 3 0
Totale 410