Photoluminescence up to 2.25 mu m wavelength is demonstrated from Ge nanopillars strained by silicon nitride stressor layers. Tensile biaxial equivalent strains of up to similar to 1.35% and similar to 0.9% are shown from 200 x 200 nm, and 300 x 300 nm square top Ge pillars respectively. Strain in the latter is confirmed by Raman spectroscopy, and supported by finite element modelling, which gives an insight into the strain distribution and its effect on the band structure, in pillar structures fully coated by silicon nitride stressor layers.

Expanding the Ge emission wavelength to 2.25 μm with SixNy strain engineering

FRIGERIO, JACOPO;CHRASTINA, DANIEL;ISELLA, GIOVANNI;
2016-01-01

Abstract

Photoluminescence up to 2.25 mu m wavelength is demonstrated from Ge nanopillars strained by silicon nitride stressor layers. Tensile biaxial equivalent strains of up to similar to 1.35% and similar to 0.9% are shown from 200 x 200 nm, and 300 x 300 nm square top Ge pillars respectively. Strain in the latter is confirmed by Raman spectroscopy, and supported by finite element modelling, which gives an insight into the strain distribution and its effect on the band structure, in pillar structures fully coated by silicon nitride stressor layers.
2016
Integrated optical materials; Photoluminescence; Strained germanium; Electronic, Optical and Magnetic Materials; Materials Chemistry2506 Metals and Alloys; 2506; Surfaces, Coatings and Films; Surfaces and Interfaces
File in questo prodotto:
File Dimensione Formato  
tsf602_60-63.pdf

Accesso riservato

: Publisher’s version
Dimensione 667.09 kB
Formato Adobe PDF
667.09 kB Adobe PDF   Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/991961
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? 3
social impact