In this work a combined experimental/numerical approach to describe the thermo-mechanical behavior of power devices under repetitive power pulsing is presented. Stress tests have been carried out on power DMOS implemented in Smart Power BCD technology with different Back-End Of Line (BEOL) schemes, including, for the first time, full Copper. Mechanical laboratory nano-indentation tests have been used to determine constituent properties of the metal layers. Thermo-mechanical 3D FEM modeling has been used to simulate a multi-cycle thermal loading of a whole power device with its package. Results from simulation have been qualitatively compared to experimental results. © 2013 IEEE.
Reliability characterization and FEM modeling of power devices under repetitive power pulsing
GASTALDI, DARIO;BERTARELLI, EMANUELE;LUCCHINI, RICCARDO;VENA, PASQUALE
2013-01-01
Abstract
In this work a combined experimental/numerical approach to describe the thermo-mechanical behavior of power devices under repetitive power pulsing is presented. Stress tests have been carried out on power DMOS implemented in Smart Power BCD technology with different Back-End Of Line (BEOL) schemes, including, for the first time, full Copper. Mechanical laboratory nano-indentation tests have been used to determine constituent properties of the metal layers. Thermo-mechanical 3D FEM modeling has been used to simulate a multi-cycle thermal loading of a whole power device with its package. Results from simulation have been qualitatively compared to experimental results. © 2013 IEEE.File | Dimensione | Formato | |
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