We present the current–voltage characteristics of a T‐shaped semiconductor electron waveguide structure in the nonlinear regime. This system is interesting as a potential quantum interference transistor. Calculated zero‐temperature I–V characteristics are with multiple peaks and exhibit regions of negative‐differential resistance. The peak‐to‐valley ratio has maximum value of 3:1. The calculated values of the transconductance and the differential drain conductance are small, which suggests limited abilities for conventional applications of the transistor.

The nonlinear transport regime of a T‐shaped quantum interference transistor

SORDAN, ROMAN;
1996-01-01

Abstract

We present the current–voltage characteristics of a T‐shaped semiconductor electron waveguide structure in the nonlinear regime. This system is interesting as a potential quantum interference transistor. Calculated zero‐temperature I–V characteristics are with multiple peaks and exhibit regions of negative‐differential resistance. The peak‐to‐valley ratio has maximum value of 3:1. The calculated values of the transconductance and the differential drain conductance are small, which suggests limited abilities for conventional applications of the transistor.
1996
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/679587
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