The chemisorption of O2 on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schrödinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparison against the classical Poisson-Boltzmann approach shows a higher chemisorbed charge in the quantum model, but a greater differential capacitance in the classical case.

Chemisorption on Semiconductors: the Role of Quantum Corrections on the Space Charge Regions in Multiple Dimensions

DE FALCO, CARLO;
2012-01-01

Abstract

The chemisorption of O2 on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schrödinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparison against the classical Poisson-Boltzmann approach shows a higher chemisorbed charge in the quantum model, but a greater differential capacitance in the classical case.
2012
cadmium compounds; chemisorption; II-VI semiconductors; nanostructured materials; numerical analysis; oxygen; Poisson equation; Schrödinger equation; space charge; wide band gap semiconductors
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/645331
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