The operation of a digital logic inverter consisting of one pp- and one nn-type graphene transistor integrated on the same sheet of monolayer graphene is demonstrated. Both transistors initially exhibited pp-type behavior at low gate voltages, since air contamination shifted their Dirac points from zero to a positive gate voltage. Contaminants in one transistor were removed by electrical annealing, which shifted its Dirac point back and therefore restored nn-type behavior. Boolean inversion is obtained by operating the transistors between their Dirac points. The fabricated inverter represents an important step toward the development of digital integrated circuits on graphene.
Integrated complementary graphene inverter
RUSSO, VALERIA;SORDAN, ROMAN
2009-01-01
Abstract
The operation of a digital logic inverter consisting of one pp- and one nn-type graphene transistor integrated on the same sheet of monolayer graphene is demonstrated. Both transistors initially exhibited pp-type behavior at low gate voltages, since air contamination shifted their Dirac points from zero to a positive gate voltage. Contaminants in one transistor were removed by electrical annealing, which shifted its Dirac point back and therefore restored nn-type behavior. Boolean inversion is obtained by operating the transistors between their Dirac points. The fabricated inverter represents an important step toward the development of digital integrated circuits on graphene.File | Dimensione | Formato | |
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