It is well known that the process of doping semiconductors(normally silicon) has lately assumed very great importance, in paricular in the manifacture of electronic devices.In this paper we shall limit our study to the most common dopant, phosphorous, since the other materials can be considered particular cases. We study a mathematical model and an existence and uniqueness theorem is proved.

On a Mathematical model relative to the doping of semiconductors

COLLINI, TIZIANA;
2005-01-01

Abstract

It is well known that the process of doping semiconductors(normally silicon) has lately assumed very great importance, in paricular in the manifacture of electronic devices.In this paper we shall limit our study to the most common dopant, phosphorous, since the other materials can be considered particular cases. We study a mathematical model and an existence and uniqueness theorem is proved.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/640511
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