We report on the chemical and electronic properties of epitaxial Fe/MgO/Ge(001) heterostructures probed by X-ray Photoemission Spectroscopy. At variance with the Fe/MgO/Fe system, annealing at 570 K produces a sizable interdiffusion at the upper Fe/MgO interface, while at 470 K this process is inhibited. The XPS analysis of band alignment in heterostructures annealed at 470 K grown onto an intrinsic Ge substrate indicates that the Fermi level is placed at the center of the MgO gap and that the Schottky barrier height is 0.35±0.1 eV, thus indicating a partial depinning of the Fermi level.
Chemical and electronic properties fo Fe/MgO/Ge heterostructures for spin electronics
PETTI, DANIELA;CANTONI, MATTEO;RINALDI, CHRISTIAN;BERTACCO, RICCARDO
2011-01-01
Abstract
We report on the chemical and electronic properties of epitaxial Fe/MgO/Ge(001) heterostructures probed by X-ray Photoemission Spectroscopy. At variance with the Fe/MgO/Fe system, annealing at 570 K produces a sizable interdiffusion at the upper Fe/MgO interface, while at 470 K this process is inhibited. The XPS analysis of band alignment in heterostructures annealed at 470 K grown onto an intrinsic Ge substrate indicates that the Fermi level is placed at the center of the MgO gap and that the Schottky barrier height is 0.35±0.1 eV, thus indicating a partial depinning of the Fermi level.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
MOGe JPhysConfSeries_292_012010_2011.pdf
Accesso riservato
:
Post-Print (DRAFT o Author’s Accepted Manuscript-AAM)
Dimensione
424.9 kB
Formato
Adobe PDF
|
424.9 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
