We have characterized the role of electro-optic field shielding effect in bulk CdTe : In rods at 1550 nm. Different temperatures, modulating frequencies and probe beam power have been tested. Experimental results agree with a dielectric relaxation explanation, when taking into account the high injection regime and the contribution of collection of photo-generated free excess carriers at the contacts. The lowering in electro-optic yield can be minimized by a suitable reduction in operating temperature and sample dimensions, having defined the optical power of the signal to be processed.

Characterization of Electro-Optic Shielding Effect in Bulk CdTe: In Crystal

MARTINELLI, MARIO;PIETRALUNGA, SILVIA MARIA;
2000-01-01

Abstract

We have characterized the role of electro-optic field shielding effect in bulk CdTe : In rods at 1550 nm. Different temperatures, modulating frequencies and probe beam power have been tested. Experimental results agree with a dielectric relaxation explanation, when taking into account the high injection regime and the contribution of collection of photo-generated free excess carriers at the contacts. The lowering in electro-optic yield can be minimized by a suitable reduction in operating temperature and sample dimensions, having defined the optical power of the signal to be processed.
2000
Optical communications; electro-optic effect; TLC
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/271532
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