InGaAs/InP avalanche diodes with planar geometry have been, for the first time, specifically designed and fabricated for Geiger-mode operation, with the aim of developing detectors of single photons at 1550nm wavelength. Experimental tests have been carried out for investigating the main issues in the detector performance: dark count rate, quantum detection efficiency, afterpulsing and photon-timing jitter. Special attention has been devoted to the role played by the InGaAsP grading layer in the device performance.
Fabrication and characterization of InGaAs/InP single-photon avalanche diode detectors
COVA, SERGIO
2005-01-01
Abstract
InGaAs/InP avalanche diodes with planar geometry have been, for the first time, specifically designed and fabricated for Geiger-mode operation, with the aim of developing detectors of single photons at 1550nm wavelength. Experimental tests have been carried out for investigating the main issues in the detector performance: dark count rate, quantum detection efficiency, afterpulsing and photon-timing jitter. Special attention has been devoted to the role played by the InGaAsP grading layer in the device performance.File in questo prodotto:
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