All-optical switching performances of the semiconductor ternary alloy CdZnTe have been characterized, operating on a signal at /spl lambda/=1.5 /spl mu/m. The physical switching mechanism exploits both the electrooptic effect and near-infrared photoconductivity. The use of CdZnTe improves the recovery time constant by six orders of magnitude when compared to previously tested CdTe-based modules. Control fluences of less than 0.02 nJ//spl mu/m/sup 2/ and extinction ratios as high as 23 dB have been demonstrated when operating in the nanosecond temporal regime.
Optically Induced Switching in CdZnTe
MARTINELLI, MARIO;PIETRALUNGA, SILVIA MARIA;
2000-01-01
Abstract
All-optical switching performances of the semiconductor ternary alloy CdZnTe have been characterized, operating on a signal at /spl lambda/=1.5 /spl mu/m. The physical switching mechanism exploits both the electrooptic effect and near-infrared photoconductivity. The use of CdZnTe improves the recovery time constant by six orders of magnitude when compared to previously tested CdTe-based modules. Control fluences of less than 0.02 nJ//spl mu/m/sup 2/ and extinction ratios as high as 23 dB have been demonstrated when operating in the nanosecond temporal regime.File in questo prodotto:
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