In this paper, we report on the potential of silicon oxycarbide (SiOC) for integrated photonic applications. SiOC films are developed by reactive radio frequency magnetron sputtering from a silicon carbide (SiC) target in the presence of argon and oxygen gases. The optical properties of the developed SiOC film are characterized with spectroscopic ellispometry over a broad wavelength range 300-1600 nm. The refractive index n of the SiOC film is 2.2 at wavelength lambda = 1550 nm and the extinction coefficient k is estimated to be less than 10(-4) in the near-infrared region above 600 nm. The topography of SiOC films is studied with AFM showing very smooth surface, with rms roughness of 0.24 nm. SiOC film with refractive index n = 2.2 is then patterned by direct laser-writing lithography and etched with reactive ion etching to realize high contrast SiOC core optical waveguides for integrated photonics applications. The waveguide losses are characterized at telecommunication wavelength lambda = 1550 nm. As an example of photonic integrated devices integrating SiOC films, a microring resonator is fabricated where a SiOC layer is used as a coating material for the core of a silicon oxynitride (SiON) waveguide.

Integrated photonic devices with silicon oxycarbide

Memon F. A.;Morichetti F.;Melloni A.
2018-01-01

Abstract

In this paper, we report on the potential of silicon oxycarbide (SiOC) for integrated photonic applications. SiOC films are developed by reactive radio frequency magnetron sputtering from a silicon carbide (SiC) target in the presence of argon and oxygen gases. The optical properties of the developed SiOC film are characterized with spectroscopic ellispometry over a broad wavelength range 300-1600 nm. The refractive index n of the SiOC film is 2.2 at wavelength lambda = 1550 nm and the extinction coefficient k is estimated to be less than 10(-4) in the near-infrared region above 600 nm. The topography of SiOC films is studied with AFM showing very smooth surface, with rms roughness of 0.24 nm. SiOC film with refractive index n = 2.2 is then patterned by direct laser-writing lithography and etched with reactive ion etching to realize high contrast SiOC core optical waveguides for integrated photonics applications. The waveguide losses are characterized at telecommunication wavelength lambda = 1550 nm. As an example of photonic integrated devices integrating SiOC films, a microring resonator is fabricated where a SiOC layer is used as a coating material for the core of a silicon oxynitride (SiON) waveguide.
2018
Proceedings of SPIE - The International Society for Optical Engineering
9781510618923
9781510618930
High contrast optical waveguides; Integrated photonics; Optical materials; RF sputtering; Silicon oxycarbide; Spectroscopic ellispometry; Thin films
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1121659
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