The electrical properties of a Single Hole Field Effect Transistor (SH-FET) based on CMOS technology are analyzed in a cryogenic environment. Few electron-hole Coulomb diamonds are observed using quantum transport spectroscopy measurements, down to the limit of single hole transport. Controlling the hole filling of the SH-FET is made possible by biasing the top gate, while the bulk contact is employed as a back gate that tunes the hole state coupling with the contacts and their distance from the interface. We compare the cryogenic Coulomb blockade regime with the room temperature regime, where the device operation is similar to that of a standard p-MOSFET.
Tunable single hole regime of a silicon field effect transistor in standard CMOS technology
FERRARI, GIORGIO;PRATI, ENRICO
2016-01-01
Abstract
The electrical properties of a Single Hole Field Effect Transistor (SH-FET) based on CMOS technology are analyzed in a cryogenic environment. Few electron-hole Coulomb diamonds are observed using quantum transport spectroscopy measurements, down to the limit of single hole transport. Controlling the hole filling of the SH-FET is made possible by biasing the top gate, while the bulk contact is employed as a back gate that tunes the hole state coupling with the contacts and their distance from the interface. We compare the cryogenic Coulomb blockade regime with the room temperature regime, where the device operation is similar to that of a standard p-MOSFET.File | Dimensione | Formato | |
---|---|---|---|
Submitted.pdf
Accesso riservato
Descrizione: Articolo principale
:
Pre-Print (o Pre-Refereeing)
Dimensione
862.61 kB
Formato
Adobe PDF
|
862.61 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.