Tungsten oxide (WO3) as nanostructured thin film is an attractive compound to be used for sensors applications. We report on WO3 nanostructured thin films deposited by radio-frequency plasma assisted laser ablation technique. A tungsten oxide ceramic target was irradiated at 193 nm wavelength; the depositions have been carried out in a gas mixture of oxygen and argon on heated substrates (corning glass and silicon) up to 600°C. The gas pressure varied between 1 Pa and 10 Pa. The influence of the substrate temperature, gas pressure and RF power on properties of the obtained nanostructures was investigated by Atomic Force Microscopy, Raman spectroscopy, Secondary Ion Mass Spectrometry and spectro-ellipsometry.

Growth and characterizations of nanostructured tungsten oxides

OSSI, PAOLO MARIA;
2012-01-01

Abstract

Tungsten oxide (WO3) as nanostructured thin film is an attractive compound to be used for sensors applications. We report on WO3 nanostructured thin films deposited by radio-frequency plasma assisted laser ablation technique. A tungsten oxide ceramic target was irradiated at 193 nm wavelength; the depositions have been carried out in a gas mixture of oxygen and argon on heated substrates (corning glass and silicon) up to 600°C. The gas pressure varied between 1 Pa and 10 Pa. The influence of the substrate temperature, gas pressure and RF power on properties of the obtained nanostructures was investigated by Atomic Force Microscopy, Raman spectroscopy, Secondary Ion Mass Spectrometry and spectro-ellipsometry.
2012
Nanostructured thin films; Radio-frequency discharge; Tungsten oxide; Physics and Astronomy (all)
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1002954
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