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Titolo Data di pubblicazione Autori File
Nanosecond single-photon timing with InGaAs/InP photodiodes 1-gen-1994 ZAPPA, FRANCOLACAITA, ANDREA LEONARDOCOVA, SERGIO +
Germanium avalanche photodiodes for the detection in the near infrared 1-gen-1994 LACAITA, ANDREA LEONARDOZAPPA, FRANCO
Single-photon detection beyond 1µm: performance of commercially available germanium photodiodes. 1-gen-1994 LACAITA, ANDREA LEONARDOZAPPA, FRANCOCOVA, SERGIO +
Limits to the timing performance of single-photon avalanche diodes 1-gen-1994 LACAITA, ANDREA LEONARDOLONGHI, STEFANOSOTTOCORNOLA SPINELLI, ALESSANDRO
Photon emission from hot electrons in silicon 1-gen-1995 LACAITA, ANDREA LEONARDO +
Avalanche photodiodes for near-infrared photon-counting 1-gen-1995 COVA, SERGIOLACAITA, ANDREA LEONARDOZAPPA, FRANCO +
Electron Mobility in Highly doped MOSFET's with Standard and Nitrided Gate Oxide 1-gen-1995 LACAITA, ANDREA LEONARDO +
Germanium quad-cell for single photon detection in the near infrared 1-gen-1995 LACAITA, ANDREA LEONARDOZAPPA, FRANCO +
Performance optimization of active quenching circuits for picosecond timing with single photon avalanche diodes. 1-gen-1995 LACAITA, ANDREA LEONARDOCOVA, SERGIOSAMORI, CARLOGHIONI, MASSIMO ANTONIO
Avalanche transients in shallow p-n junction biased above breakdown 1-gen-1995 LACAITA, ANDREA LEONARDOSOTTOCORNOLA SPINELLI, ALESSANDROAND S. LONGHI
Time-Resolved Photoluminescence Measurements of InGaAs/InP Multiple Quantum Well Structures at 1.3μm wavelenghts by use of Germaniun Single-Photon Avalanche Diodes 1-gen-1996 COVA, SERGIOLACAITA, ANDREA LEONARDO +
Counting, timing and tracking with a single-photon germanium detector 1-gen-1996 ZAPPA, FRANCOLACAITA, ANDREA LEONARDOCOVA, SERGIO +
Temperature dependence of electron and hole ionization coefficents in InP. 1-gen-1996 ZAPPA, FRANCOLACAITA, ANDREA LEONARDO +
Solid-State Single-Photon Detectors 1-gen-1996 ZAPPA, FRANCOLACAITA, ANDREA LEONARDOCOVA, SERGIO +
Dead space approximation for impact ionization in silicon 1-gen-1996 SOTTOCORNOLA SPINELLI, ALESSANDROPACELLI, ANDREALACAITA, ANDREA LEONARDO
Array-like metal-resistance-semiconductor photodetectors: characterization and modelling. 1-gen-1996 ZAPPA, FRANCOLACAITA, ANDREA LEONARDO +
Single-photon detection beyond 1µm: performance of commercially available InGaAs/InP detectors 1-gen-1996 LACAITA, ANDREA LEONARDOZAPPA, FRANCOCOVA, SERGIO +
On the shape of hot-carrier tails in non-local transport 1-gen-1996 LACAITA, ANDREA LEONARDO +
Light emission from direct and photon-assisted processes in AlGaAs/GaAs HBT's. 1-gen-1996 LACAITA, ANDREA LEONARDO +
Ultrasensitive photodetectors and circuits in silicon microelectronics 1-gen-1996 COVA, SERGIOLACAITA, ANDREA LEONARDOGHIONI, MASSIMO ANTONIOZAPPA, FRANCO
Impact of Fast Interface States on Effective Mobility of Heavily-Doped MOSFET's. 1-gen-1996 LACAITA, ANDREA LEONARDO +
Mean Gain of Avalanche Photodiodes in a Dead Space Model 1-gen-1996 SOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO
Avalanche photodiodes and quenching circuits for single-photon detection 1-gen-1996 COVA, SERGIOGHIONI, MASSIMO ANTONIOLACAITA, ANDREA LEONARDOSAMORI, CARLOZAPPA, FRANCO
Effective mobility in heavily doped n-MOSFET's: measurements and models 1-gen-1996 LACAITA, ANDREA LEONARDO +
Characterization and modeling of Metal-Resistance-Semiconductor Photodetectors. 1-gen-1997 ZAPPA, FRANCOLACAITA, ANDREA LEONARDOSAMORI, CARLO
Electron mobility in ULSI MOSFET's: Effect of interface traps and Oxide Nitridation 1-gen-1997 LACAITA, ANDREA LEONARDO +
Physics and Numerical Simulation of Single Photon Avalanche Diodes. 1-gen-1997 SOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO
Determination of interface state density of ULSI n-MOSFET by 1/f noise measurements. 1-gen-1997 LACAITA, ANDREA LEONARDOLONGONI, ANTONIO FRANCESCO +
Dynamic Floating Body Effects in PD SOI MOSFEt's Biased in the King Region. 1-gen-1997 LACAITA, ANDREA LEONARDO +
Switching Characteristics and Static Parameter Extraction in PD SOI MOSFET's 1-gen-1997 LACAITA, ANDREA LEONARDO +
Impact ionization in silicon: A microscopic view 1-gen-1998 PACELLI, ANDREASOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO
Design Issues of LC Tuned Oscillators for Integrated Transceivers 1-gen-1998 SAMORI, CARLOLACAITA, ANDREA LEONARDO +
Phase-noise performance of crystal-like LC tanks 1-gen-1998 LACAITA, ANDREA LEONARDOSAMORI, CARLO
Experimental verification of the link between timing jitter and phase noise 1-gen-1998 SAMORI, CARLOLACAITA, ANDREA LEONARDO +
Impact of Local-Negative-Feedback on the MRS Avalanche Photodetector Operation. 1-gen-1998 ZAPPA, FRANCOLACAITA, ANDREA LEONARDOSAMORI, CARLO
Spectrum folding and phase noise in LC tuned oscillators 1-gen-1998 SAMORI, CARLOLACAITA, ANDREA LEONARDOZAPPA, FRANCO +
Application of 1/ƒ noise measurements to the characterization of near-interface oxide traps in ULSI n-MOSFET's. 1-gen-1998 LACAITA, ANDREA LEONARDOLONGONI, ANTONIO FRANCESCO +
Characterization of back channel interface in SOI MOSFET's. 1-gen-1998 LACAITA, ANDREA LEONARDOSOTTOCORNOLA SPINELLI, ALESSANDRO +
Energy Distribution of Stress-Induced Oxide Traps. 1-gen-1998 SOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
A Comparison between CV and charge-pumping in the extraction of MOS interface states. 1-gen-1998 LACAITA, ANDREA LEONARDO +
A Physically-based model of the effective mobility in heavily-doped n-MOSFET's. 1-gen-1998 LACAITA, ANDREA LEONARDO +
Effect of N2O nitridation on the eletrical properties of MOS gate oxides 1-gen-1998 PACELLI, ANDREALACAITA, ANDREA LEONARDOSOTTOCORNOLA SPINELLI, ALESSANDRO +
Direct evidence of impact excitation and spatial profiling of excited Er in light emitting Si Diodes 1-gen-1998 LACAITA, ANDREA LEONARDO +
A detailed study of electron mobility degradation by surface scattering in ULSI MOSFET's. 1-gen-1998 LACAITA, ANDREA LEONARDO +
Experimental characterization of the continuous switching regime in floating-body PD SOI MOSFET's. 1-gen-1998 LACAITA, ANDREA LEONARDO +
Impact ionization in silicon: A microscopic view. 1-gen-1998 LACAITA, ANDREA LEONARDO +
Reliable Extraction of MOS Interface Traps from Low-Frequency CV Measurements. 1-gen-1998 LACAITA, ANDREA LEONARDO +
Transiet behavior and low Vds hysteresis in PD SOI MOSFET's. 1-gen-1998 LACAITA, ANDREA LEONARDO +
Switch-Off Behavior of Floating body PD SOI MOSFET's. 1-gen-1998 LACAITA, ANDREA LEONARDO +
Separation of electron and hole traps by transient current analysis 1-gen-1999 SOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDORIGAMONTI, MATTEO ANTONIOIELMINI, DANIELE +
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