Sfoglia per Autore
Double-Index Averaging: A Novel Technique for Dynamic Element Matching in Sigma-Delta A/D Converters.
1999-01-01 D., Cini; Samori, Carlo; Lacaita, ANDREA LEONARDO
Physics and characterization of transiet effects in SOI transistors.
1999-01-01 Lacaita, ANDREA LEONARDO; L., Perron
MOSFET simulation with quantum effects and non-local mobility model
1999-01-01 SOTTOCORNOLA SPINELLI, Alessandro; A., Benvenuti; Villa, Stefano; Lacaita, ANDREA LEONARDO
Impact of indirect stability on phase noise performance of fully–integrated LC tuned VCOs
1999-01-01 Samori, Carlo; Lacaita, ANDREA LEONARDO; A., Zanchi; Levantino, Salvatore; F., Torrisi
Analysis of space and Energy Distribution of Stress-Induced Oxide traps
1999-01-01 SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; D., Minelli; G., Ghidini
On surface roughness-limited mobility in highly doped n-MOSFET's.
1999-01-01 Mazzoni, G; Lacaita, ANDREA LEONARDO; L. PERRON PIROVANO, A.
Quantum effects on the extraction of MOS oxide traps by 1/ƒ noise measurements
1999-01-01 Pacelli, A; Villa, S; Lacaita, ANDREA LEONARDO; AND L., Perron
Monte Carlo simulation of conductance characteristics in SOI-MOSFET.
1999-01-01 S., Araya; K., Yamasaki; H., Ueno; N., Mori; C., Hamaguchi; L., Perron; Lacaita, ANDREA LEONARDO
Experimental method for the determination of the energy distribution of stress-induced oxide traps
1999-01-01 SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; Rigamonti, MATTEO ANTONIO; Ghidini, G.
Explaining the Dependences of Electron and Hole Mobilities in Si MOSFETs Inversion Layer
1999-01-01 A., Pirovano; Lacaita, ANDREA LEONARDO; G., Zandler
Modeling of SILC based on electron and hole tunneling - Part I: transient effects
2000-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; M. A., Rigamonti; Lacaita, ANDREA LEONARDO
Quantum-mechanical 2D simulation of surface- and buried-channel p-MOS
2000-01-01 SOTTOCORNOLA SPINELLI, Alessandro; A., Benvenuti; L., Conserva; Lacaita, ANDREA LEONARDO; A., Pacelli
Polysilicon quantization effects on the electrical properties of MOS transistors
2000-01-01 SOTTOCORNOLA SPINELLI, Alessandro; Pacelli, Andrea; Lacaita, ANDREA LEONARDO
Modeling of SILC based on electron and hole tunneling -- Part II: Steady-state
2000-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; M. A., Rigamonti; Lacaita, ANDREA LEONARDO
The impact of polysilicon quantization on ultra-thin oxide MOSFET characteristics
2000-01-01 SOTTOCORNOLA SPINELLI, Alessandro; A., Pacelli; Lacaita, ANDREA LEONARDO
Role of interface and bulk defect-states in the low-voltage leakage conduction of ultrathin oxides
2000-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; G., Ghidini
Phase noise degradation at high oscillation amplitudes in LC-tuned VCO's
2000-01-01 Samori, Carlo; Lacaita, ANDREA LEONARDO; A., Zanchi; Levantino, Salvatore; G., Calì
Impact ionization and stress-induced leakage current in thin gate oxides
2000-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; G., Ghidini
New Formulas of Interconnect Capacitances Based on Results of Confocal Mapping Method
2000-01-01 F., Stellari; Lacaita, ANDREA LEONARDO
Experimental evidence for recombination-assisted leakage in thin oxides
2000-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO
Accurate Doping Profile Extraction Near the Si/SiO2 Interface with a Novel Low Temperature C-V Technique
2000-01-01 A., Benvenuti; Lacaita, ANDREA LEONARDO; A., Pacelli; Pirovano, Agostino
Effect of oxide tunneling on the measurements of MOS interface states
2000-01-01 Giannini, M.; Pacelli, A.; Lacaita, ANDREA LEONARDO; P. E. R. R. O. N. L., M.
Explaining the dependences of the hole and electron mobilities in Si inversion layers
2000-01-01 Pirovano, Agostino; Lacaita, ANDREA LEONARDO; G., Zandler; R., Oberhuber
Evidence for recombination at oxide defects and new SILC model
2000-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; G., Ghidini
A recombination model for transient and stationary stress-induced leakage current
2000-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; A., Martinelli; G., Ghidini
Experimental and numerical analysis of the quantum yield
2000-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; D. J., Dimaria; G., Ghidini
On the correlation between surface roughness and inversion layer mobility in Si-MOSFET’s
2000-01-01 Pirovano, Agostino; Lacaita, ANDREA LEONARDO; G., Ghidini; G., Tallarida
Statistical modeling of reliability and scaling projections for Flash memories
2001-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; A., Modelli
New technique for fast characterization of SILC distribution in Flash arrays
2001-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; L., Confalonieri; A., Visconti
A detailed investigation of the quantum yield experiment
2001-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; D. J., Di Maria; G., Ghioni
Fully 2D quantum-mechanical simulation of nanoscale MOSFETs
2001-01-01 Lacaita, ANDREA LEONARDO; SOTTOCORNOLA SPINELLI, Alessandro; A., Pirovano
An Efficient Tool For Extraction of Interconnect Models in Submicron Layouts
2001-01-01 Maffezzoni, Paolo; Brambilla, ANGELO MAURIZIO; Lacaita, ANDREA LEONARDO
A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories
2001-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; A., Modelli
Novel Low-temperature C-V Technique for MOS Doping Profile Determination Near The Si/SiO2 Interface
2001-01-01 Pirovano, Agostino; Lacaita, ANDREA LEONARDO; A., Pacelli; A., Benvenuti
A fully-integrated low-power low-noise 2.6-GHz bipolar VCO for wireless applications
2001-01-01 Samori, Carlo; A., Zanchi; Levantino, Salvatore; Lacaita, ANDREA LEONARDO
A recombination- and trap-assisted tunneling model for stress-induced leakage current
2001-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; A., Martinelli; G., Ghidini
An improved formula for the determination of the polysilicon doping
2001-01-01 SOTTOCORNOLA SPINELLI, Alessandro; Pacelli, Andrea; Lacaita, ANDREA LEONARDO
Different types of defects in silicon dioxide characterized by their transient behavior
2001-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; M., Beretta; Lacaita, ANDREA LEONARDO
Automatic Amplitude Control Loop for a 2-V, 2.5-GHz LC-tank VCO
2001-01-01 A., Zanchi; Bonfanti, ANDREA GIOVANNI; Levantino, Salvatore; Samori, Carlo; Lacaita, ANDREA LEONARDO
Impact of AAC design on phase noise performance of VCOs
2001-01-01 A., Zanchi; Samori, Carlo; Lacaita, ANDREA LEONARDO; Levantino, Salvatore
A 2-V 2.5-GHz – 104-dBc/Hz at 100kHz Fully Integrated VCO with Wide-Band Low-Noise Automatic Amplitude Control Loop
2001-01-01 A., Zanchi; Samori, Carlo; Levantino, Salvatore; Lacaita, ANDREA LEONARDO
Monitoring Flash EEPROM reliability by equivalent cell analysis.
2002-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; M., Gubello; M., VAN DUUREN
Low jitter design of a 0.35-um-CMOS frequency divider operating up to 3 GHz
2002-01-01 Romano', Luca; Levantino, Salvatore; S., Pellerano; Samori, Carlo; Lacaita, ANDREA LEONARDO
A statistical model for SILC in Flash memories
2002-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; A., Modelli
Equivalent cell approach for extraction of the SILC distribution in Flash EEPROM cells
2002-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; A., Modelli
Modeling of anomalous SILC in Flash memories based on tunneling at multiple defects
2002-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; A., Modelli
Correlated defect generation in thin oxides and its impact on Flash reliability
2002-01-01 Ielmini, Daniele; Lacaita, ANDREA LEONARDO; SOTTOCORNOLA SPINELLI, Alessandro; M., Van Duuren
Modeling of stress-induced leakage current and impact ionization in MOS devices
2002-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; G., Ghidini
Statistical profiling of SILC spot in Flash memories
2002-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; A., Visconti
Two-dimensional quantum effects in nanoscale MOSFETs
2002-01-01 Pirovano, Agostino; Lacaita, ANDREA LEONARDO; SOTTOCORNOLA SPINELLI, Alessandro
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