Sfoglia per Autore
Polysilicon quantization effects on the electrical properties of MOS transistors
2000-01-01 SOTTOCORNOLA SPINELLI, Alessandro; Pacelli, Andrea; Lacaita, ANDREA LEONARDO
Quantum-mechanical 2D simulation of surface- and buried-channel p-MOS
2000-01-01 SOTTOCORNOLA SPINELLI, Alessandro; A., Benvenuti; L., Conserva; Lacaita, ANDREA LEONARDO; A., Pacelli
Modeling of SILC based on electron and hole tunneling -- Part II: Steady-state
2000-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; M. A., Rigamonti; Lacaita, ANDREA LEONARDO
Modeling of SILC based on electron and hole tunneling - Part I: transient effects
2000-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; M. A., Rigamonti; Lacaita, ANDREA LEONARDO
Impact ionization and stress-induced leakage current in thin gate oxides
2000-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; G., Ghidini
The impact of polysilicon quantization on ultra-thin oxide MOSFET characteristics
2000-01-01 SOTTOCORNOLA SPINELLI, Alessandro; A., Pacelli; Lacaita, ANDREA LEONARDO
Evidence for recombination at oxide defects and new SILC model
2000-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; G., Ghidini
Experimental evidence for recombination-assisted leakage in thin oxides
2000-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO
A recombination model for transient and stationary stress-induced leakage current
2000-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; A., Martinelli; G., Ghidini
Role of interface and bulk defect-states in the low-voltage leakage conduction of ultrathin oxides
2000-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; G., Ghidini
Experimental and numerical analysis of the quantum yield
2000-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; D. J., Dimaria; G., Ghidini
Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3nm)
2001-01-01 R., Clerc; SOTTOCORNOLA SPINELLI, Alessandro; G., Ghibaudo; C., Leroux; G., Pananakakis
Statistical modeling of reliability and scaling projections for Flash memories
2001-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; A., Modelli
New technique for fast characterization of SILC distribution in Flash arrays
2001-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; L., Confalonieri; A., Visconti
A detailed investigation of the quantum yield experiment
2001-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; D. J., Di Maria; G., Ghioni
A recombination- and trap-assisted tunneling model for stress-induced leakage current
2001-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; A., Martinelli; G., Ghidini
A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories
2001-01-01 Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro; Lacaita, ANDREA LEONARDO; A., Modelli
A new conduction mechanism for the anomalous cells in thin oxide Flash EEPROMs
2001-01-01 A., Modelli; F., Gilardoni; Ielmini, Daniele; SOTTOCORNOLA SPINELLI, Alessandro
An improved formula for the determination of the polysilicon doping
2001-01-01 SOTTOCORNOLA SPINELLI, Alessandro; Pacelli, Andrea; Lacaita, ANDREA LEONARDO
Fully 2D quantum-mechanical simulation of nanoscale MOSFETs
2001-01-01 Lacaita, ANDREA LEONARDO; SOTTOCORNOLA SPINELLI, Alessandro; A., Pirovano
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