Sfoglia per Autore
"Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM"
2007-01-01 U., Russo; Ielmini, Daniele; Cagli, Carlo; Lacaita, ANDREA LEONARDO; S., Spiga; C., Wiemer; M., Perego; M., Fanciulli
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction
2008-01-01 Cagli, Carlo; Ielmini, Daniele; Nardi, Federico; Lacaita, ANDREA LEONARDO
Impact of electrode materials on resistive-switching memory (RRAM) programmning
2009-01-01 U., Russo; Cagli, Carlo; S., Spiga; E., Cianci; Ielmini, Daniele
Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices
2009-01-01 Russo, Ugo; Ielmini, Daniele; Cagli, Carlo; Lacaita, ANDREA LEONARDO
Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices
2009-01-01 Cagli, Carlo; Nardi, Federico; Ielmini, Daniele
Resistance transition in metal oxides induced by electronic threshold switching
2009-01-01 Ielmini, Daniele; Cagli, Carlo; Nardi, Federico
Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode
2009-01-01 A., Demolliens; Muller, C. H.; D., Deleruyelle; S., Spiga; E., Cianci; M., Fanciulli; Nardi, Federico; Cagli, Carlo; Ielmini, Daniele
Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices.
2009-01-01 Russo, Ugo; Ielmini, Daniele; Cagli, Carlo; Lacaita, ANDREA LEONARDO
Size-dependent temperature instability in NiO–based resistive switching memory
2010-01-01 Ielmini, Daniele; Nardi, Federico; Cagli, Carlo; Lacaita, ANDREA LEONARDO
Universal switching and noise characteristics of nanofilaments in metal-oxide RRAMs
2010-01-01 Ielmini, Daniele; Nardi, Federico; Cagli, Carlo
Sub-10 microA reset in NiO-based resistive switching memory (RRAM) cells
2010-01-01 Nardi, Federico; Ielmini, Daniele; Cagli, Carlo; S., Spiga; M., Fanciulli; L., Goux; D. J., Wouters
Resistance-dependent switching in NiO-based filamentary RRAM devices
2010-01-01 Ielmini, Daniele; Cagli, Carlo; Nardi, Federico; Lacaita, ANDREA LEONARDO
Size-dependent retention time in NiO-based resistive switching memories
2010-01-01 Ielmini, Daniele; Nardi, Federico; Cagli, Carlo; Lacaita, ANDREA LEONARDO
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories
2010-01-01 Ielmini, Daniele; Nardi, Federico; Cagli, Carlo
TRADE-OFF BETWEEN DATA RETENTION AND RESET IN NIO RRAMS
2010-01-01 Ielmini, Daniele; Nardi, Federico; Cagli, Carlo; Lacaita, ANDREA LEONARDO
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories
2011-01-01 Ielmini, Daniele; Cagli, Carlo; Nardi, Federico
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories
2011-01-01 Nardi, Federico; Ielmini, Daniele; Cagli, Carlo; S., Spiga; M., Fanciulli; L., Goux; D. J., Wouters
Reset instability in pulsed-operated unipolar resistive switching memory
2011-01-01 Nardi, Federico; Cagli, Carlo; S., Spiga; Ielmini, Daniele
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices
2011-01-01 Ielmini, Daniele; S., Spiga; Nardi, Federico; Cagli, Carlo; A., Lamperti; E., Cianci; M., Fanciulli
Universal reset characteristics of unipolar and bipolar metal-oxide RRAM
2011-01-01 Ielmini, Daniele; Nardi, Federico; Cagli, Carlo
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