Sfoglia per Autore
Variability and failure of set process in HfO2 RRAM2013 5th IEEE International Memory Workshop
2013-01-01 Balatti, Simone; Ambrogio, Stefano; Ielmini, Daniele; D. C., Gilmer
Understanding switching variability and random telegraph noise in resistive RAM
2013-01-01 Ambrogio, Stefano; Balatti, Simone; A., Cubeta; A., Calderoni; N., Ramaswamy; Ielmini, Daniele
Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM
2013-01-01 Balatti, Simone; Ambrogio, Stefano; David C., Gilmer; Ielmini, Daniele
(Invited) Resistive Switching in Metal Oxides: From Physical Modeling to Device Scaling
2013-01-01 Ielmini, Daniele; Ambrogio, Stefano; S., Balatti
Spike-timing dependent plasticity in a transistor-selected resistive switching memory
2013-01-01 Ambrogio, Stefano; S., Balatti; F., Nardi; S., Facchinetti; Ielmini, Daniele
Statistical modeling of program and read variability in resistive switching devices
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Cubeta, A.; Ielmini, Daniele
Impact of the mechanical stress on switching characteristics of electrochemical resistive memory
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Choi, Seol; Ielmini, Daniele
Statistical fluctuations in HfOx resistive-switching memory: Part II-Random telegraph noise
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Cubeta, Antonio; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele
Impact of low-frequency noise on read distributions of resistive switching memory (RRAM)
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Mccaffrey, V.; Wang, D.; Ielmini, Daniele
Statistical fluctuations in HfOx resistive-switching memory: Part I-Set/Reset variability
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Cubeta, Antonio; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele
Stress-induced asymmetric switching and filament instability in electrochemical memories
2014-01-01 Ielmini, Daniele; Ambrogio, Stefano; Balatti, Simone
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Gilmer, David C.; Ielmini, Daniele
Voltage-dependent random telegraph noise (RTN) in HfOx resistive RAM
2014-01-01 Balatti, Simone; Ambrogio, Stefano; Cubeta, Antonio; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele
Pulsed cycling operation and endurance failure of metal-oxide resistive (RRAM)
2014-01-01 Balatti, Simone; Ambrogio, Stefano; Wang, Z. Q.; Sills, S.; Calderoni, A.; Ramaswamy, N.; Ielmini, Daniele
Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arrays
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Ielmini, Daniele; Gilmer, D. C.
Electronic neuromorphic system, synaptic circuit with resistive switching memory method of performing spike-timing dependent plasticity
2015-01-01 Ielmini, D.; Ambrogio, S.; Balatti, S.; Wang, Z.
Accelerated retention test method by controlling ion migration barrier of resistive random access memory
2015-01-01 Koo, Yunmo; Ambrogio, Stefano; Woo, Jiyong; Song, Jeonghwan; Ielmini, Daniele; Hwang, Hyunsang
Variability and cycling endurance in nanoscale resistive switching memory
2015-01-01 Ielmini, Daniele; Balatti, Simone; Wang, Z. Q.; Ambrogio, Stefano
Normally-off Logic Based on Resistive Switches-Part II: Logic Circuits
2015-01-01 Balatti, Simone; Ambrogio, Stefano; Ielmini, Daniele
Cycling-induced degradation of metal-oxide resistive switching memory (RRAM)
2015-01-01 Wang, Z. Q.; Ambrogio, Stefano; Balatti, Simone; Sills, S.; Calderoni, A.; Ramaswamy, N.; Ielmini, Daniele
Legenda icone
- file ad accesso aperto
- file disponibili sulla rete interna
- file disponibili agli utenti autorizzati
- file disponibili solo agli amministratori
- file sotto embargo
- nessun file disponibile