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Titolo Data di pubblicazione Autori File
Complementary switching in metal oxides: toward diode-less crossbar RRAMs 1-gen-2011 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM 1-gen-2012 IELMINI, DANIELENARDI, FEDERICOBALATTI, SIMONE
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling 1-gen-2012 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Bipolar-switching model of RRAM by field- and temperature-activated ion migration 1-gen-2012 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories 1-gen-2012 CHOI, SEOLBALATTI, SIMONENARDI, FEDERICOIELMINI, DANIELE
Ion migration model for resistive switching in transition metal oxides 1-gen-2012 IELMINI, DANIELEBALATTI, SIMONENARDI, FEDERICO +
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study 1-gen-2012 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory 1-gen-2012 CHOI, SEOLBALATTI, SIMONENARDI, FEDERICOIELMINI, DANIELE
Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation 1-gen-2012 CHOI, SEOLBALATTI, SIMONENARDI, FEDERICOIELMINI, DANIELE +
Variability and failure of set process in HfO<inf>2</inf> RRAM2013 5th IEEE International Memory Workshop 1-gen-2013 BALATTI, SIMONEAMBROGIO, STEFANOIELMINI, DANIELE +
Complementary switching in oxide-based bipolar resistive switching memory (RRAM) 1-gen-2013 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament 1-gen-2013 BALATTI, SIMONEIELMINI, DANIELE +
Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM 1-gen-2013 BALATTI, SIMONEAMBROGIO, STEFANOIELMINI, DANIELE +
Filament evolution during resistive switching in oxide RRAM 1-gen-2013 IELMINI, DANIELEBALATTI, SIMONE +
Understanding switching variability and random telegraph noise in resistive RAM 1-gen-2013 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Statistical fluctuations in HfOx resistive-switching memory: Part II-Random telegraph noise 1-gen-2014 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches 1-gen-2014 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Statistical fluctuations in HfOx resistive-switching memory: Part I-Set/Reset variability 1-gen-2014 AMBROGIO, STEFANOBALATTI, SIMONEIELMINI, DANIELE +
Voltage-dependent random telegraph noise (RTN) in HfOx resistive RAM 1-gen-2014 BALATTI, SIMONEAMBROGIO, STEFANOIELMINI, DANIELE +
Stress-induced asymmetric switching and filament instability in electrochemical memories 1-gen-2014 IELMINI, DANIELEAMBROGIO, STEFANOBALATTI, SIMONE
Mostrati risultati da 1 a 20 di 45
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