Sfoglia per Autore
Complementary switching in metal oxides: toward diode-less crossbar RRAMs
2011-01-01 Nardi, Federico; Balatti, Simone; S., Larentis; Ielmini, Daniele
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM
2012-01-01 Ielmini, Daniele; Nardi, Federico; Balatti, Simone
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling
2012-01-01 S., Larentis; Nardi, Federico; Balatti, Simone; D., Gilmer; Ielmini, Daniele
Bipolar-switching model of RRAM by field- and temperature-activated ion migration
2012-01-01 S., Larentis; Nardi, Federico; Balatti, Simone; D. C., Gilmer; Ielmini, Daniele
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories
2012-01-01 Choi, Seol; Balatti, Simone; Nardi, Federico; Ielmini, Daniele
Ion migration model for resistive switching in transition metal oxides
2012-01-01 Ielmini, Daniele; S., Larentis; Balatti, Simone; Nardi, Federico; D. C., Gilmer
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study
2012-01-01 Nardi, Federico; S., Larentis; Balatti, Simone; D. C., Gilmer; Ielmini, Daniele
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory
2012-01-01 Choi, Seol; Balatti, Simone; Nardi, Federico; Ielmini, Daniele
Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation
2012-01-01 Choi, Seol; S., Ambrogio; Balatti, Simone; Nardi, Federico; Ielmini, Daniele
Variability and failure of set process in HfO2 RRAM2013 5th IEEE International Memory Workshop
2013-01-01 Balatti, Simone; Ambrogio, Stefano; Ielmini, Daniele; D. C., Gilmer
Complementary switching in oxide-based bipolar resistive switching memory (RRAM)
2013-01-01 Nardi, Federico; Balatti, Simone; S., Larentis; D. C., Gilmer; Ielmini, Daniele
Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament
2013-01-01 Balatti, Simone; S., Larentis; D. C., Gilmer; Ielmini, Daniele
Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM
2013-01-01 Balatti, Simone; Ambrogio, Stefano; David C., Gilmer; Ielmini, Daniele
Filament evolution during resistive switching in oxide RRAM
2013-01-01 Ielmini, Daniele; Balatti, Simone; S., Larentis
Understanding switching variability and random telegraph noise in resistive RAM
2013-01-01 Ambrogio, Stefano; Balatti, Simone; A., Cubeta; A., Calderoni; N., Ramaswamy; Ielmini, Daniele
Statistical fluctuations in HfOx resistive-switching memory: Part II-Random telegraph noise
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Cubeta, Antonio; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Gilmer, David C.; Ielmini, Daniele
Statistical fluctuations in HfOx resistive-switching memory: Part I-Set/Reset variability
2014-01-01 Ambrogio, Stefano; Balatti, Simone; Cubeta, Antonio; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele
Voltage-dependent random telegraph noise (RTN) in HfOx resistive RAM
2014-01-01 Balatti, Simone; Ambrogio, Stefano; Cubeta, Antonio; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele
Stress-induced asymmetric switching and filament instability in electrochemical memories
2014-01-01 Ielmini, Daniele; Ambrogio, Stefano; Balatti, Simone
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