Sfoglia per Autore
A 32 GHz MMIC distributed amplifier based on n-channel SiGe MODFETs
2003-01-01 P., Abele; M., Zeuner; I., Kallfass; J., Mueller; H., LABAN HIWILEPO; T., Hackbarth; Chrastina, Daniel; H., VON KAENEL; U., Koenig; H., Schumacher
A 32 GHz MMIC distributed amplifier based on n-channel SiGe MODFETs
2003-01-01 P., Abele; M., Zeuner; Chrastina, Daniel; T., Hackbarth; J., Kallfass; U., Konig; H., Laban Hiwilepo; J., Mueller; H., Schumacher; H., Von Kaenel
Reduced self-heating in Si/SiGe field-effect RF transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition
2003-01-01 T., Hackbarth; H. J., Herzog; K. H., Hieber; U., Koenig; Bollani, Monica; Chrastina, Daniel; H., VON KAENEL
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data
2004-01-01 L., Martinelli; A., Marzegalli; P., Raiteri; Bollani, Monica; F., Montalenti; L., Miglio; Chrastina, Daniel; Isella, Giovanni; VON KÄNEL, Hans
High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition
2004-01-01 VON KÄNEL, Hans; Chrastina, Daniel; B., Roessner; Isella, Giovanni; J. P., Hague; Bollani, Monica
Scattering mechanisms in high-mobility strained-Ge channels
2004-01-01 B., Roessner; Chrastina, Daniel; Isella, Giovanni; H., VON KAENEL
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain-dependent dislocation nature
2004-01-01 A., Marzegalli; F., Montalenti; M., Bollani; Leo, Miglio; Isella, Giovanni; Chrastina, Daniel; H., VON KAENEL
Strained Si HFETs for microwave applications: state-of-the-art and further approaches
2004-01-01 M., ENCISO AGUILAR; M., Rodriguez; N., Zerouinian; F., Aniel; T., Hackbarth; H. J., Herzog; U., Koenig; S., Mantl; B., Hollaender; Chrastina, Daniel; Isella, Giovanni; VON KÄNEL, Hans; K., Lyyutovich; M., Oehme
High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition
2004-01-01 Chrastina, Daniel; Isella, Giovanni; B., Roessner; Bollani, Monica; E., Mueller; T., Hackbarth; H., VON KAENEL
Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices
2004-01-01 Isella, Giovanni; Chrastina, Daniel; B., Rossner; T., Hackbarth; H. J., Herzog; U., Konig; VON KÄNEL, Hans
Raman spectroscopy of Si1−xGex epilayers
2005-01-01 F., Pezzoli; L., Martinelli; E., Grilli; M., Guzzi; S., Sanguinetti; Bollani, Monica; Chrastina, Daniel; Isella, Giovanni; H., von Känel; E., Wintersberger; J., Stangl; G., Bauer
Raman spectroscopy of Si1-xGex epilayers
2005-01-01 G., Bauer; J., Stangl; H., Von Kaenel; E., Wintersberger; Bollani, Monica; Chrastina, Daniel; E., Grilli; M., Guzzi; Isella, Giovanni; L., Martinelli; F., Pezzoli; S., Sanguinetti
Electron-electron interaction in p-SiGe/Ge quantum wells
2005-01-01 B., Batlogg; Chrastina, Daniel; Isella, Giovanni; B., Roessner; H., Von Kaenel
Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition
2005-01-01 Chrastina, Daniel; Isella, Giovanni; Bollani, Monica; B., Rössner; E., Müller; T., Hackbarth; E., Wintersberger; Z., Zhong; J., Stangl; H., von Känel
LEPECVD - a production technique for SiGe MOSFETs and MODFETs
2005-01-01 Chrastina, Daniel; T., Hackbarth; C., Hague; H., Herzog; K., Hieber; Isella, Giovanni; U., Koenig; B., Roessner; H., Von Kaenel
Photocurrent and transmission spectroscopy of direct-gap interband transitions in Ge/SiGe quantum wells
2006-01-01 S., Tsujino; H., Sigg; G., Mussler; Chrastina, Daniel; H., VON KAENEL
Logic gates with a single Hall bar heterostructure
2006-01-01 Sordan, Roman; Miranda, ALESSIO MASSIMILIA; Osmond, Johann; Chrastina, Daniel; Isella, Giovanni; VON KÄNEL, Hans
Hole band nonparabolicity and effective mass measurement in p-SiGe/Ge heterostructures
2006-01-01 B., Roessner; B., Batlogg; H., VON KAENEL; Chrastina, Daniel; Isella, Giovanni
2-D Hole Gas with Two-Subband Occupation in a Strained Ge Channel: Scattering Mechanisms
2006-01-01 Roessner, B.; VON KÄNEL, Hans; Chrastina, Daniel; Isella, Giovanni; Batlogg, B.
Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells
2006-01-01 R., Ginige; B., Corbett; M., Modreanu; C., Barrett; J., Hilgarth; Isella, Giovanni; Chrastina, Daniel; VON KÄNEL, Hans
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