Sfoglia per Autore
Accurate Doping Profile Extraction Near the Si/SiO2 Interface with a Novel Low Temperature C-V Technique
2000-01-01 A., Benvenuti; Lacaita, ANDREA LEONARDO; A., Pacelli; Pirovano, Agostino
Explaining the dependences of the hole and electron mobilities in Si inversion layers
2000-01-01 Pirovano, Agostino; Lacaita, ANDREA LEONARDO; G., Zandler; R., Oberhuber
On the correlation between surface roughness and inversion layer mobility in Si-MOSFET’s
2000-01-01 Pirovano, Agostino; Lacaita, ANDREA LEONARDO; G., Ghidini; G., Tallarida
Novel Low-temperature C-V Technique for MOS Doping Profile Determination Near The Si/SiO2 Interface
2001-01-01 Pirovano, Agostino; Lacaita, ANDREA LEONARDO; A., Pacelli; A., Benvenuti
Two-dimensional quantum effects in nanoscale MOSFETs
2002-01-01 Pirovano, Agostino; Lacaita, ANDREA LEONARDO; SOTTOCORNOLA SPINELLI, Alessandro
Degradation dynamics for deep scaled p-MOSFET's during hot-carrier stress
2002-01-01 MONZIO COMPAGNONI, Christian; Pirovano, Agostino; Lacaita, ANDREA LEONARDO
2D QM simulation and optimization of decanano non-overlapped MOS devices
2003-01-01 Gusmeroli, Riccardo; SOTTOCORNOLA SPINELLI, Alessandro; Pirovano, Agostino; Lacaita, ANDREA LEONARDO; F., Boeuf; T., Skotnicki
Reliability study of phase-change non-volatile memories.
2004-01-01 Pirovano, Agostino; Redaelli, Andrea; F., Pellizzer; F., Ottogalli; M., Tosi; Ielmini, Daniele; Lacaita, ANDREA LEONARDO; R., Bez
Optimization of the nonoverlap length in decanano MOS devices with 2-D QM simulations
2004-01-01 Gusmeroli, Riccardo; SOTTOCORNOLA SPINELLI, Alessandro; Pirovano, Agostino; Lacaita, ANDREA LEONARDO; F., Boeuf; T., Skotnicki
Assessment of threshold switching dynamics in phase-change chalcogenide memories
2005-01-01 Ielmini, Daniele; Lacaita, ANDREA LEONARDO; Mantegazza, Davide; F., Pellizzer; Pirovano, Agostino
Phase change memory device for multibit storage
2007-01-01 Redaelli, A.; Pirovano, A.; Pellizzer, F.
Anomalous cells with low resistance in phase change memory arrays
2007-01-01 Mantegazza, Davide; Ielmini, Daniele; Pirovano, Agostino; Lacaita, ANDREA LEONARDO
Thresold switching and phase transition numerical models for phase change memory simulations
2008-01-01 Redaelli, Andrea; Pirovano, Agostino; A., Benvenuti; Lacaita, ANDREA LEONARDO
A reliable technique for experimental evaluation of crystallization activation energy in PCMs
2008-01-01 Redaelli, Andrea; Pirovano, Agostino; I., Tortorelli; Ielmini, Daniele; Lacaita, ANDREA LEONARDO
Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics
2008-01-01 Mantegazza, Davide; Ielmini, Daniele; Pirovano, Agostino; Lacaita, ANDREA LEONARDO; E., Varesi; F., Pellizzer; R., Bez
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5
2009-01-01 Boniardi, Mattia; Redaelli, Andrea; Pirovano, Agostino; I., Tortorelli; Ielmini, Daniele; F., Pellizzer
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices
2009-01-01 Boniardi, Mattia; Ielmini, Daniele; Lavizzari, Simone; Lacaita, ANDREA LEONARDO; Redaelli, Andrea; Pirovano, Agostino
Unified mechanisms for structure relaxation and crystallization in phase-change memory
2009-01-01 Ielmini, Daniele; Boniardi, Mattia; Lacaita, ANDREA LEONARDO; Redaelli, Andrea; Pirovano, Agostino
Reversing a potential polarity for reading phase change cells to shorten a recovery delay after programming
2010-01-01 F., Pellizzer; Ielmini, Daniele; Pirovano, Agostino
Multiphysics modeling of PCM devices for scaling investigation
2010-01-01 G., Ferrari; A., Ghetti; Ielmini, Daniele; Redaelli, Andrea; Pirovano, Agostino
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