Sfoglia per Autore
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction
2008-01-01 Cagli, Carlo; Ielmini, Daniele; Nardi, Federico; Lacaita, ANDREA LEONARDO
Read-disturb limited reliability of multilevel NiO-based resistive-switching memory
2009-01-01 Ielmini, Daniele; Nardi, Federico; A., Vigani; E., Cianci; S., Spiga
Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices
2009-01-01 Cagli, Carlo; Nardi, Federico; Ielmini, Daniele
Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode
2009-01-01 A., Demolliens; Muller, C. H.; D., Deleruyelle; S., Spiga; E., Cianci; M., Fanciulli; Nardi, Federico; Cagli, Carlo; Ielmini, Daniele
Resistance transition in metal oxides induced by electronic threshold switching
2009-01-01 Ielmini, Daniele; Cagli, Carlo; Nardi, Federico
Size-dependent temperature instability in NiO–based resistive switching memory
2010-01-01 Ielmini, Daniele; Nardi, Federico; Cagli, Carlo; Lacaita, ANDREA LEONARDO
Universal switching and noise characteristics of nanofilaments in metal-oxide RRAMs
2010-01-01 Ielmini, Daniele; Nardi, Federico; Cagli, Carlo
Sub-10 microA reset in NiO-based resistive switching memory (RRAM) cells
2010-01-01 Nardi, Federico; Ielmini, Daniele; Cagli, Carlo; S., Spiga; M., Fanciulli; L., Goux; D. J., Wouters
Resistance-dependent switching in NiO-based filamentary RRAM devices
2010-01-01 Ielmini, Daniele; Cagli, Carlo; Nardi, Federico; Lacaita, ANDREA LEONARDO
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories
2010-01-01 Ielmini, Daniele; Nardi, Federico; Cagli, Carlo
TRADE-OFF BETWEEN DATA RETENTION AND RESET IN NIO RRAMS
2010-01-01 Ielmini, Daniele; Nardi, Federico; Cagli, Carlo; Lacaita, ANDREA LEONARDO
Size-dependent retention time in NiO-based resistive switching memories
2010-01-01 Ielmini, Daniele; Nardi, Federico; Cagli, Carlo; Lacaita, ANDREA LEONARDO
Filament diffusion model for simulating reset and retention processes in RRAM
2011-01-01 S., Larentis; Cagli, Carlo; Nardi, Federico; Ielmini, Daniele
Nanowire-based RRAM crossbar memory with metallic core–oxide shell nanostructure
2011-01-01 Cagli, Carlo; Nardi, Federico; B., Harteneck; Z., Tan; Y., Zhang; Ielmini, Daniele
Reset current reduction and set-reset instabilities in unipolar NiO RRAM
2011-01-01 Nardi, Federico; Cagli, Carlo; S., Spiga; Ielmini, Daniele
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires
2011-01-01 Cagli, Carlo; Nardi, Federico; B., Harteneck; Z., Tan; Y., Zhang; Ielmini, Daniele
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices
2011-01-01 Ielmini, Daniele; S., Spiga; Nardi, Federico; Cagli, Carlo; A., Lamperti; E., Cianci; M., Fanciulli
Universal reset characteristics of unipolar and bipolar metal-oxide RRAM
2011-01-01 Ielmini, Daniele; Nardi, Federico; Cagli, Carlo
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories
2011-01-01 Ielmini, Daniele; Cagli, Carlo; Nardi, Federico
Complementary switching in metal oxides: toward diode-less crossbar RRAMs
2011-01-01 Nardi, Federico; Balatti, Simone; S., Larentis; Ielmini, Daniele
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